°Â±Ê¸¦ 9510082 ¿û ¿®Ï¯ Suga Nobuo
S. Hasegawa, X. Tong, C-S. Jiang, Y. Nakajima, T. Nagao, "Electrical conduction via surface-state bands", Surf. Sci. , Vol. 386, 322-327 (1997).
°Â±Ê¸¦ 9510186 ¥Ø¥ë¥ß ¥Ó¥ó ¥â¥Ï¥Þ¥É ¥¿¥Ò¥ë Hermie Bin Md.Tahir
A. A. Baski, H. Fuchs, "Epitaxial growth of silver on mica as studied by AFM and STM," Surface Science, Vol. 313(1994), 275-288.
±ü»³¸¦ 9410203 ¥ß¥ß¡¡¥µ¥Ç¥£¥Ê Mimi Sadina
J. Robertson, "Amorphous carbon cathodes for field emission display", Thin Solid Films, Vol. 296, 61-65 (1997).
²ÏÌ 9410133 ÃæÊ¿ ¹¬ÃË Nakahira Sachio
Kai. Starke, Eduardo Navas, Elke Arenholz, LutzBaumgarton, and Gunter Kaindl, "Magnetic Circular Dichroism in Potoemission form Rare Earth Materials: A New Technique in Surface and Thin-Film Magnetism", IEEE TRANSACTION ON MAGNETICS, Vol. 31, No. 6, 3313-3318 (1995).
²ÏÌ 9510057 ¾®Ã« ÀëÇ· Kotani Nobuyuki
John F. Conley, Jr. "Application of Electron Spin Resonance as a Tool for Building In Reliability (BIR)". Mat. Res. Soc. Symp. Proc. Vol. 428, 293-310 (1996).
²ÏÌ 9510142 Ê¿Ìî Ë®É× Hirano Kunio
Khattak C. P. , Schmid F. , Schubert W. K. ,"High-efficiency solar cells using HEM silicon", IEEE World Conf Photovoltaic Energy Convers, Vol2, 1351-1355(1994).
²ÏÌ 9510174 »³ÅÄ¡¡¹î¸Ê Yamada Katsumi
Fuzu Zhang, Stuart Wenham, and Martin A. Green, "Large Area Concentrator Buried Contact Solar Cells", IEEE Transactions on Electron Devices, Vol. 42, No. 1, 144-149(1995).
²ÏÌ 9510174 »³ÅÄ¡¡¹î¸Ê Yamada Katsumi
Fuzu Zhang, Stuart Wenham, and Martin A. Green, "Large Area,
²ÏÌ 9510185 ¥Õ¥¡¥¦¥º¥¤ ¥Ó¥ó ¥µ¥Ð¥Ö¥ó Fauzi bin Sababun
V.M.Botnaryuk,A.V.Koval,A.V.Simashkevich,and D.A.Sherban,"Polarization of photosensitivity of silicon solar cells with and antireflection coating consisting of a mixture of indium and tin oxides",Semiconductors 31(7) July 1997,1063-7826/97/070677-04.
²ÏÌ 9510187 ¥Û¥ó¥Ó¥ç¥ó¥Á¥ç¥ë HongByungChul
W. A. BADAWY."preparation,eletrochemical,photoelectrochemical and solid-state characteristics of indium-incorporated TiO2 thin films for solar cell fabrication".JOURNAL OF MATERIALS SCIENCE 32 4979-4984(1997)
»³¸ý¸¦ 9510043 ³¤ÄÅ Íø¹Ô Kaizu Toshiyuki
K. H. Schmidt, G. Medeiros-Ribeiro, M. Oestreich, and P. M .Petroff, "Carrier relaxation and electronic structure in InAs self-assembled quantum dots", Phys. Rev. B, Vol. 54, 11346-11353 (1996).
»³¸ý¸¦ 9510066 ºØÆ£ ²ÂË® Saito Yoshikuni
E. Y. Lee, V. Narayamamurti, "Monte Carlo simulations of ballistic-electoron-emission-microscopy imaging and spectroscopy of buried mesoscopic structures", Phs. Rev. B, Vol. 55, R16033-R16036 (1997).
»³¸ý¸¦ 9510108 »ûß· Çî²í Terasawa Hiromasa
Hao Lee, Weidong Yang, and Peter C. Sercel, "Temperture and excitation dependence of photoluminescence line shape in InAs/GaAs quantum-dot structures", Phy. Rev. B, Vol. 55, 9757-9762 (1997).
»³¸ý¸¦ 9510143 ×¢ÅÄ ±É¿ Hirota Hidenobu
J. W. G. Wildoer, C. J. P. M. Harmans, H. van Kempen, "Observation of Landau levels at the InAs(110) surface by scanning tunneling spectroscopy", Phy. Rev. B, Vol. 55, R16013-R16016 (1997).
»³¸ý¸¦ 9510190 ȬÌÚ½¤Ê¿ Yagi Shuuhei
N. Grandjean, J. Massies, and M. Leroux, "Monte Carlo simulation of In surface segregation during the growth of InxGa1-xAs on GaAs(001)", Phys. Rev. B, vol. 53, 998-1001 (1996).
»³¸ý¸¦ 9520011 Àî¸ý ϼ÷ Kawaguchi Kazutoshi
T. R. Ramachandran, A. Madhukar, I. Mukhametzhanov, R. Heitz, A. Kalburge, Q. Xie, and P. Chen, "Natural of Stranski-Krastanow growth of InAs on GaAs(001)", J. Vac. Sci. Technol. B 16(3), 1330-1333, (1998).
ÃæÅĸ¦ 9110007 ÈÓÅÄ Ï¯ Iida Akira
E. R. Neagu, J. N. Marat-Mendes, D. K. Das-Gupta, R. M. Neagu and R. Igreja. "Analysis of thermally stimulated discharge current around glass-rubber transition temperature in polyethylene terephthalate". J. Appl. Phys. 82, 2488-2496 (1997)
ÃæÅĸ¦ 9310038 ³«ÅÄ À¶Î´ Kaita Kiyotaka
M. Suszynska, R. Capelletti "THERMALLY-INDUCED DEPOLARIZATION CURRENT SPECTRA OF NaCl:Ni2+ CRYSTALS,"ACTA PHYSICA A Vol.80,129-139(1991).
ÃæÅĸ¦ 9410127 »ûÅè À¿»Ê Terajima Seiji
S. Devautour, J. Vanderschueren, J. C. Giuntini, F. Henn, J. V. Zanchetta, "Analysis of thermally stimulated currents measured on ionic conductors", American Institute of Physics, 5057-5062(1997)
ÃæÅĸ¦ 9410140 ¿·¸¶ ÀµÂç Niihara Masahiro
Wing C. Wong, Donaid S. McClure, Sergei A. Basan, Milan R. Kokta, "Charge-exchange processes in titanium-doped sapphire crystals. Charge-transfer transition states, carrier trapping, and detrapping" The Amirican Physical Society VOLUME 51, NUMBER 9. 5693-5698 (1995)
ÃæÅĸ¦ 9410205 ¥æ¥º¥ê¥â¥Ï¥Þ¥É¥æ¥½¥Õ Yuzri Mohd Yusoff
S. Isber, S. Charar, C. Fau, V. Mathet, and M. Averous. "EPR spectra and magnetization of Eu ions in PbSe." Phys. Rev. B. Vol. 52. 1678-1682 (1995).
ÃæÅĸ¦ 9510165 µÜËÜ ¹§»Ê Miyamoto Koji
Tae Ho Yeom, Sung Ho Choh, Mao Lu Du, Min Su Jang, "EPR study of Fe3+ impurities in crystalline BiVO4", Phys. Rev. B, Vol. 53, 3415-3421 (1996)
ÅÄÃ渦 9420036 Ê¡°æ ·¼È¬ Fukui Keihachi
Shaoqiang Zhang and Rongfu Xiao is,"Yttrium oxide filmsprepared by pulsed laser deposition," J.Appl.Phys.Vol.83,3842-3848(1998)
ÅÄÃ渦 9510009 ÈÓÅç ¹¨°ì Iijima Hirokazu
Qi-Zong Qin, Zhen-Hui Han, and Hai-Jun Dang, "An angle-resolved time-of-flight mass spectrometric study of pulsed laser ablated Ta2O5", J. Appl. Phys. , Vol. 83, No. 11, 6082-6088 (1998).
ÅÄÃ渦 9510032 Âç²ì ¸ù°ì Kouichi Ohga
H. Schmidt, J. Ihlemann, B. Wolff-Rottke, K. Luther, and J. Troe, "Ultraviolet laser ablation of polymers: spot size, pulse duration, and plume attenuation effects explained, "Journal of applied physics. Vol. 83, 5458-5467(1998).
ÅÄÃ渦 9510044 ³ÄÍ Î´¹¸ Takaaki Kaizuka
C. Xu, Y. long, R. Zhang, L. Zhao, S. Qian, Y. Li, "Laser ablaition
ÅÄÃ渦 9510044 ³ÄÍ Î´¹¸ Takaaki Kaizuka
C. Xu, Y. long, R. Zhang, L. Zhao, S. Qian, Y. Li, "Laser ablaition time-of-flight mass spectrometic probling of the surface states of SiO2-based porous materials, "Appl. Phys. A vol.66,99-102(1998)
ÅÄÃ渦 9510071 º´Æ£ Àé²ÅÉ× Chikao Sato
M. A. El khakani, M. Chaker, A. Jean, S. Boliy, H. Pepin, and J. C. Kieffer, " Effect of rapid thermal annealing on both the stress and the bonding states of a- SiC: H films" , J. Appl. phys. , Vol. 74, No. 4, 2834-2840( 1993 ) .
ÅÄÃ渦 9510086 Ïɸ« À»Æó Sumi Seiji
V. V. Kveder, V. D. Negrii, E. A. Shteinman, A. N. Izotov, Yu. A. Osip'yan, and R. K. Nikolaev, "Long-lived excited states and photoluminescence excitation in single crystals of fullerence C60", JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, VOL 86, NUMBER 2, 405-411(1998).
ÅÄÃ渦 9510133 É͸ý¹¨¼£ Hamaguchi Koji
E.C.Samano,G.Soto,J.Valenzuela,and L.Cota,"In situ monitoring and characterization of SIC interface formed in carbon filmes grown by pulsed laser deposition" J.Vac.Sci.Technol.A,Vol.15,No.5,2585-2591(Sep/Oct 1997)
Åò¶¿¸¦ 9410118 ´Ü Îɹ° tate yosihiro
R. Stockel, M. Stammler, K. Janischowsky, L. Lay, M, Albrecht, H. P. Strunk, "Diamond nuclation under bias conditions", J.Appl.Phys , 531-539(1998).
Åò¶¿¸¦ 9420015 ÌÚ¼ Àµ¸÷ Masamitsu Kimura
W.Kalss , R.Haubner , G.Lippold , B.Lux , "Diamond deposition on platinum and palladium - Raman investigations" , Diamond and Related Materials , Vol 7 , 158-164 (1998) .
Åò¶¿¸¦ 9420039 ÉðÆ£ ¿®¿Í Nobuhito Muto
M. Gioti, S. Logothetidis, "The effect of substrate bias in amorphous carbon films prepared by magnetron sputtering and monitored by in-situ spectroscopic ellipsometry", Diamond and Related Materials, Vol 7, 444-448 (1998).
Åò¶¿¸¦ 9510067 ºç¸¶ ºÌ˧ sakakibara sayaka
R. Stockel, K. Janischowsky, S. Rohmfeld, J. Ristein, M. Hundhausen, L. Lay, "Growth of diamond on silicon during the bias pretreatment in chemical vapor deposition of polycrystalline diamond films", J.Appl.Phys , 768-776(1996).
Åò¶¿¸¦ 9520007 ²ËÜ ¾¡Î§ okimoto katunori
N. M. J. Conway, W. I. Milne, J. Robertson, "Electronic properties and doping of hydrogenated tetrahedral amorphous carbon films", Diamond and Related Materials ,Vol 7 , 477-481(1998)
Åò¶¿¸¦ 9520042 ¼ãÉ© Ãé¹â wakabishi tadataka
X. Jiang, C. P. Klages, "Recent Developments Heteroepitaxial Nucleation and Growth of Diamond on silicon" , phys.stat.sol , 175-183 (1996).
̾¼è¸¦ 9420038 ´Ý»³ ÊöÌÀ Maruyama Mineaki
Y. Wada, "Atom electronics: a proposal of atom / molecule swithcing devices", Surface Science, Vol. 386, 265-278 (1997).
̾¼è¸¦ 9510018 ÀÐ´Ý ÂÙÇ· Ishimaru Yasuyuki
T. Fujita, Y. Okawa, Y. Matsumoto, K. Tanaka, "Phase boundaries of nanometer scale c(2*2)-O domains on the Cu(100) surface", Phys. Rev. B, Vol. 54, 2167-2174 (1996).
̾¼è¸¦ 9510036 Âç¾Â ¿ Ohnuma Shin
Y. Wada, T. Uda, M. Lutwyche, S. Kondo, and S. Heike, "A proposal of nanoscale devices based on atom/molecule switching". J. Appl. Phys. Vol. 74, No. 12, 7321-7328, (1993).
̾¼è¸¦ 9510037 ÂçÌî ¹ä»Ë Ohno Goshi
D. L. Woodraska, and J. A. Jaszczak, "Roughening and Preroughening of Diamond-Cubic{ 111} Surfaces", Phy. Rev. Let. Vol. 78. Num. 2. 258-261(1997).
̾¼è¸¦ 9510037 ÂçÌî¡¡¹ä»Ë Ohno Goshi
D.L.Woodraska and J.A.Jaszczak, "Roughening and Preroughening of
̾¼è¸¦ 9510106 ÄáÌÚ Çî Tsuruki Hiroshi
Adriano Barenco, Charles H. Bennett, Richard Cleve, David P. DiVincenzo, Norman Margolus, Peter Shor, Tycho Sleator, John A. Smolin, and Harald Weinfurter, "Elementary gates for quantum computation", Phys. Rev. A Vol. 52, 3457-3467(1995).
ÌÚ¼¸¦ 9510092 ¹â¾¾ ·½ Takamatsu Kei
A. M. Dorofeev, N. V. Gaponenko, E. E. Bachilo, N. M. kazuchits, A. A. Leshok, G. N. Troyanova, N. N. Vorosov, V. E. borisenko. "Erbium luminescence in porous silicon doped from spin-on films". J. Appl. Phys. Vol.77. No.6. 2679- 2683 (1995)
ÌÚ¼¸¦ 9510131 ÉþÉô ¿¿¸ã Hattori Shingo
S. Librtino, S. Coffa, and G. Franzo, "The effects of oxygen and defects on the deep-level properties of Er in crystalline Si" J. Appl. Phys. Vol. 78, 3867-3873(1995)
ÌÚ¼¸¦ 9510161 »°Âð ÀÆ Miyake Hitoshi
A.Polman, D.C.Jacobson, D.J.Eaglesham, R.C.Kistler,andJ.M.Poate, "Optical Doping of waveguide materials by MeV Er implantation", J.appl.Phys. vol.70,no.7,3778-84,(1991)
ÎëÌÚ¸¦ 9410044 ¾®Ìî ·¼°ì Ono Keiichi
R. T. Delamarter, BIG BLUE IBM'S USE AND ABUSE OF POWER 37-53 (1986)
ÎëÌÚ¸¦ 9410049 ³Ñ¡¡¿°ìϺ Kado Shinitiro
R. T. Delamarter, BIG BLUE IBM'S USE AND ABUSE OF POWER 121-146 (1986)
ã·Æ£¸¦ 9410116 ÅÄÂå ůÀµ Tashiro Akimasa
A. M. PANICH, "Concentration dependence in NMR spectra and study of incommensurability, phase transitions and molecular dynamics in graphite intercalation compounds and zeolites. ", J. Phys. Chem. Solids Vol. 57. Nos 6-8, pp. 1031-1036 (1996).
ã·Æ£¸¦ 9420002 °ÂÆ£ ÂÙÉ× Ando Yasuo
C. H. Xu, C. Z. Wang, C. T. Chan, and K. M. Ho, "A transferable tight-binding potential for carbon", J. Phys. Condens. Matter Vol. 4, 6047-6054 (1992).
ã·Æ£¸¦ 9510191 »³²¬ ´²ÌÀ Yamaoka Hiroaki
C. S. Jayanthi, S. Y. Wu, J. Cocks, N. S. Luo, Z. L. Xie, M. Menon and G. Yang,"Order-N method for a nonorthogonal tight-binding Hamiltonian", Phys. Rev. B Vol. 57, 3799-3802(1998).