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{\Large \bf Lattice Defect Physics Group}\\

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Professor           &:&Masashi~Suezawa\\
Associate Professor &:&Ichiro~Yonenaga\\
Assistant Professor &:&Mtchedlidze~Teimuraz and~Yoshiaki~Imaizumi\\
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(http://www.imr.tohoku.ac.jp/index-e.html)\\
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Lattice defects, i.e. vacancies/interstitials, impurities, dislocations, stacking faults, etc., control crucially the physical properties of semiconductor materials.   Thus, the understanding of the structure and nature of such lattice defects is quite important for developing new semiconductor devices in future.   The aims of our research group are to characterize the electrical, optical, and strucutral properties of defects, to observe their intrinsic atomic structure, and to clarify their generation/formation mechanism in a variety of semiconductor crystals such as Si, GeSi, GaAs, GaN, and ZnSe.   The other aim is, with the knowledge established in the above research, to create new semiconducting materials.   Some of the topics of our recent research are following: (1) investigation of electronic and optical properties of individual defects and their complexes generating from the  reaction with impurities, (2) investigation of dislocation dynamics and plasticity of semiconductors for controlling dislocation generation and dislocation-defect (impurity) interaction, (3) development of new technology for defect recognition, and (4) creation/growth of next-generation semiconductor crystals with unique properties.  


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